PART |
Description |
Maker |
BM-10EG88MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
CF00506 CF010-01 CF003-01 CF005-01 |
Broadband Power GaAs MESFET Chips
|
MIMIX[Mimix Broadband]
|
MI0805K400R-00 |
(MI0xxxx) Surface Mount EMI Suppression Ferrite Chips Signal and Power Filtering
|
Steward
|
SPP12N50C3 SPI12N50C3 SPA12N50C3 SPB12N50C3 |
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 for lowest Conduction Losses & fastest Switching COOL MOS⒙ POWER TRANSISTOR Cool MOS⑩ Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
|
INFINEON[Infineon Technologies AG]
|
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
IPI25N06S3-25 IPB25N06S3-25 SP0000-88000 SP0000-88 |
OptiMOS?-T Power-Transistor OPTIMOS⑶-T POWER-TRANSISTOR OptiMOS㈢-T Power-Transistor OptiMOST Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPU01N60C3 SPD01N60C3 Q67040-S4188 Q67040-S4193 |
for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor COOL MOS⒙ POWER TRANSISTOR Cool MOS⑩ Power Transistor Cool MOSPower Transistor
|
INFINEON[Infineon Technologies AG]
|
SIDC02D60SIC2SAWN SIDC02D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 6A die sawn Diodes - HV Chips - 600V, 6A die unsawn
|
Infineon
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
|
STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840 NPN Silicon Power Transistor
|
AUK, Corp. AUK[AUK corp]
|